DIELECTRIC AND CONDUCTIVITY PROPERTIES OF FLUX GROWN CE DOPED NBT-BT SINGLE CRYSTALS

Please use this identifier to cite or link to this item: http://localhost:8080/xmlui/handle/123456789/4488

Full metadata record

DC Field	Value	Language
dc.contributor.author	Shanmuga Sundari, S	-
dc.contributor.author	Binay, Kumar	-
dc.contributor.author	Dhanasekaran, R	-
dc.date.accessioned	2023-11-25T06:00:45Z	-
dc.date.available	2023-11-25T06:00:45Z	-
dc.date.issued	2020-04-01	-
dc.identifier.uri	https://doi.org/10.1016/j.physb.2019.411978	-
dc.description.abstract	To study the effect of Ce in the NBT-BT lattice, 0.4 wt% of CeO2 was added to the 0.94(Na0.5Bi0.5TiO3)-0.06BaTiO3, in its morphotropic phase boundary (MPB) composition, and the single crystals were grown by the flux method using Bi2O3 as a flux. The structural studies were carried by the XRD and Raman analyses. The dielectric constants were measured from room temperature to 400 °C for various frequencies in the range of 20 Hz-2 MHz. The anti-ferroelectric temperature region is increasing due to the addition of Ce in the NBT-BT. The maximum value of dielectric loss is also found to decrease from 0.4% to 0.1% due to the Ce addition. The conductivity and impedance analyses were carried out to study the relaxation process of Ce-NBT-BT single crystals.	en_US
dc.language.iso	en_US	en_US
dc.publisher	Elsevier	en_US
dc.title	DIELECTRIC AND CONDUCTIVITY PROPERTIES OF FLUX GROWN CE DOPED NBT-BT SINGLE CRYSTALS	en_US
dc.type	Article	en_US
Appears in Collections:	2.Article (63)

Files in This Item:

File	Description	Size	Format
DIELECTRIC AND CONDUCTIVITY PROPERTIES OF FLUX GROWN CE DOPED NBT-BT SINGLE CRYSTALS.docx		215.65 kB	Microsoft Word XML	View/Open