THE INFLUENCE OF ZN ON MOS2 THIN FILMS BY JET NEBULIZER SPRAY COATING METHOD FOR P-N DIODE APPLICATION

Abstract

In this study, undoped and Zn doped MoS2 films are prepared by jet nebulizer spray coating method. The effect of dopant Zn on structural, morphological and optical properties of MoS2 was characterized by XRD, FESEM with EDS, RAMAN and UV analysis. From the XRD analysis, the prepared films are crystalline nature with orthorhombic and hexagonal structure of MoS2. The Field emission scanning electron microscope images deployed the rod-like structure for MoS2 and reduced to spheroid-like structure for Zn doped MoS2 films. The energy dispersive spectra analysis confirms the presence of Zn, Mo, and S. From the UV analysis, red shift in absorption wavelength and blue shift in bandgap energy. The prepared films are characterized by dc electrical conductivity measurement and diode properties. The diode measurement were taken in light source and darkness. Diode parameters such as ideality factor, barrier height, activation energy and resistivity also studied. The ideal value (n) is between 2.23 and 2.05 and the maximum value of n reaches 4.45 for 2% Zn. Moreover, the barrier height (b) varies from 0.72 to 0.58 eV. The average conductivity of prepared films are from 3.88E-07 to 5.64E-07. The Minimum Bandgap were observed 2.5 eV for 6 Wt% of Zn concentration.