STRUCTURE, COMPOSITION, DIELECTRIC, AND AC CONDUCTION STUDIES ON TIN SELENIDE FILMS

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DC Field	Value	Language
dc.contributor.author	Suguna P	-
dc.contributor.author	Mangalaraj D	-
dc.contributor.author	Narayandass K	-
dc.contributor.author	Meena P	-
dc.date.accessioned	2020-09-25T06:59:38Z	-
dc.date.available	2020-09-25T06:59:38Z	-
dc.date.issued	1996-06-16	-
dc.identifier.issn	1862-6300	-
dc.identifier.uri	https://onlinelibrary.wiley.com/doi/abs/10.1002/pssa.2211550214	-
dc.identifier.uri	http://localhost:8080/xmlui/handle/123456789/1677	-
dc.description.abstract	Al‐SnSe‐Al thin film capacitors were fabricated onto well cleaned glass substrates by thermal evaporation under a pressure of 2 mPa. Multiple beam interferometry (MBI) was used to measure the thicknesses of the SnSe films. The composition and structure of SnxSe1‐x films were analysed using Rutherford backscattering spectrometry and X‐ray diffractogram, respectively. The capacitor samples were stabilised by aging and annealing. The variations of the dielectric constant and loss as a function of frequency at different temperatures were observed and the results are discussed. AC conduction studies reveal that the conduction mechanism is due to hopping of holes. The activation energies were also calculated.	en_US
dc.language.iso	en	en_US
dc.publisher	Wiley‐VCH Verlag/Physica Status Solidi (a), 155 (2), 405-416	en_US
dc.subject	Tin Selenide films	en_US
dc.subject	capacitors	en_US
dc.title	STRUCTURE, COMPOSITION, DIELECTRIC, AND AC CONDUCTION STUDIES ON TIN SELENIDE FILMS	en_US
dc.type	Article	en_US
Appears in Collections:	International Journals

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