THE EFFECT OF ANNEALING TEMPERATURE ON THE STRUCTURAL AND OPTICAL PROPERTIES OF IN2SE3 THIN FILMS

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DC Field	Value	Language
dc.contributor.author	D, Nithyaprakash	-
dc.contributor.author	N, Punithaveni	-
dc.contributor.author	J, Chandrasekaran	-
dc.date.accessioned	2020-09-26T06:01:07Z	-
dc.date.available	2020-09-26T06:01:07Z	-
dc.date.issued	2010-03-01	-
dc.identifier.issn	Print:1842-6573	-
dc.identifier.issn	Online:2065-3824	-
dc.identifier.uri	https://old.oam-rc.inoe.ro/index.php?option=magazine&op=view&idu=989&catid=48	-
dc.identifier.uri	http://localhost:8080/xmlui/handle/123456789/1710	-
dc.description.abstract	Thin films of In2Se3 were prepared by thermal evaporation. X-ray diffraction indicated that the as grown films were amorphous in nature and became polycrystalline gamma-In2Se3 films after annealing. Optical properties of the films, investigated by using spectrophotometer transmittance spectra in the wavelength range 200-2500 nm. The increase in the value of Eg (opt) with annealed treatment is interpreted in terms of the density of states model as proposed by Mott and Davis.	en_US
dc.language.iso	en	en_US
dc.publisher	NATL INST OPTOELECTRONICS	en_US
dc.subject	In2Se3 thin films	en_US
dc.subject	Annealing Temperature	en_US
dc.subject	Structural	en_US
dc.subject	optical properties	en_US
dc.subject	Vacuum evaporation	en_US
dc.title	THE EFFECT OF ANNEALING TEMPERATURE ON THE STRUCTURAL AND OPTICAL PROPERTIES OF IN2SE3 THIN FILMS	en_US
dc.type	Article	en_US
Appears in Collections:	International Journals

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