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dc.contributor.authorSathish, Sugumaran-
dc.contributor.authorDinesh, Muthu-
dc.contributor.authorChandar, Shekar Bellan-
dc.contributor.authorDinesh, Bheeman-
dc.contributor.authorSharmila, Chandran-
dc.date.accessioned2023-06-17T09:31:48Z-
dc.date.available2023-06-17T09:31:48Z-
dc.date.issued2017-12-
dc.identifier.issn2348-4470-
dc.identifier.urihttp://localhost:8080/xmlui/handle/123456789/3082-
dc.description.abstractHybrid PVA-In2O3 transparent nano thin film (293 nm) was prepared by very simple and cost effective dip coating method. The effect of annealing temperature on the functional group, structure, morphology and optical properties was investigated. The presence of metal-oxide (In-O) bond was confirmed from Fourier transform infrared spectroscopy. X-ray diffraction patterns revealed the predominantly amorphous in nature of the films. Scanning electron microscopy images revealed spherical shaped uniform grains distributed over the entire film surface. The sizes of the grains increased with increase of annealing temperature. The percentage of transmittance (80 to 90%) increases whereas band gap energy (3.80 to 3.76 eV) values decreases with increase of annealing temperature. The obtained results indicated that the amorphous nature and high transmittance with wide band gap of the prepared transparent hybrid nano thin films indicated the feasibility of utilizing these nano thin films in transparent optical device applications.en_US
dc.language.isoen_USen_US
dc.publisherInternational Journal of Advance Engineering and Research Developmenten_US
dc.subjectPVAen_US
dc.subjectIn2Oen_US
dc.subjectstructureen_US
dc.subjectmorphologyen_US
dc.subjectoptical propertiesen_US
dc.titleHYBRID PVA-IN2O3 NANO THIN FILM FOR TRANSPARENT OPTICAL DEVICESen_US
dc.typeArticleen_US
Appears in Collections:International Journals

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