TUNING THE ELECTRICAL PROPERTIES OF GRAPHENE OXIDE BY NITROGEN ION IMPLANTATION: IMPLICATION FOR GAS SENSING

Abstract

Tailoring the electrical properties of graphene oxide (GO) is one of the important requirements for its application in future electronic devices. A modified Hummer’s method was employed in the preparation of GO and spray coated on glass substrates, subsequently drying at 60 °C for 6 h. The as prepared samples were implanted with 100 keV nitrogen ions at the fluences of 1E15, 5E15 and 1E16 ions/cm2. A peak shift to higher 2θ in XRD pattern indicates the reduction of GO to rGO after N ion implantation. The intensity ratio of G and D bands (IG/ID) for GO derived from the Raman analysis increased from 0.97 to 1.02 after implantation (1E16 ions/cm2). The EDS analysis confirms the implantation of N ions in GO. The electrical conductivity improved as a function of fluence, and observed to be high for the sample of 1E16 ions/cm2, and is tested for methanol sensing. Concentration dependent methanol sensing shows 5.9% response for 300 ppm. Above results show that ion implantation is a promising method for controlled reduction of GO for tuning the electrical properties.