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Please use this identifier to cite or link to this item: http://localhost:8080/xmlui/handle/123456789/1710
Title: THE EFFECT OF ANNEALING TEMPERATURE ON THE STRUCTURAL AND OPTICAL PROPERTIES OF IN2SE3 THIN FILMS
Authors: D, Nithyaprakash
N, Punithaveni
J, Chandrasekaran
Keywords: In2Se3 thin films
Annealing Temperature
Structural
optical properties
Vacuum evaporation
Issue Date: 1-Mar-2010
Publisher: NATL INST OPTOELECTRONICS
Abstract: Thin films of In2Se3 were prepared by thermal evaporation. X-ray diffraction indicated that the as grown films were amorphous in nature and became polycrystalline gamma-In2Se3 films after annealing. Optical properties of the films, investigated by using spectrophotometer transmittance spectra in the wavelength range 200-2500 nm. The increase in the value of Eg (opt) with annealed treatment is interpreted in terms of the density of states model as proposed by Mott and Davis.
URI: https://old.oam-rc.inoe.ro/index.php?option=magazine&op=view&idu=989&catid=48
http://localhost:8080/xmlui/handle/123456789/1710
ISSN: Print:1842-6573
Online:2065-3824
Appears in Collections:International Journals

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